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Au etch 200 - 5.00 l nbtaue Bottle size: 5.00 l Au etch 200 Gold Etchant   General Information Au etch 200 is a non-hazardous, cyanide-free, slightly alkaline etchant for Au. The etchant is used for the wet-chemical patterning of Au layers with selectivity to metals like Pt, Ni, Cr, Ti, Al. Common areas of use for semiconductor fabrication or micro system technology. Product Properties Low undercut (in the range of the layer thickness), minimum feature size < 1 µm Selectivity to many materials, e.g. common metals used in electroplating industry Available in different purity grades Compatible to resist masking Not hazardous substance and easy to handle Selectivity Au etch 200 is compatible/etches selective to following materials: Resists: common Novolak as masking resist (e.g. AZ® Photoresist) Metals: no attack on Pt, Ni, Cr, Ti, Al, Ta Metals: attacked Au, Cu Semiconductor materials: Si, SiO2, Si3N4 Data on selectivity and compatibility are manufacturer information and do not claim to be complete. Please contact us for further details. Etching Rate Under normal condition, the etching rate is around 40 nm/min (at 50°C). The mixed etching solution is stable over time and can be used multiple times depending on the requirements of application. It is recommended to dispose the solution at the latest, when the etching rate has changed by 20%. Further Information MSDS: Safety Data Sheet Au etch 200 english Sicherheitsdatenblatt Au etch 200 german TDS: Technical Data Sheet Au etch 200 english Technical Data Sheet Au etch 200 german Application Notes: Wet Etching english Nasschemisches Ätzen german Wet Etching of Metals english Nasschemisches Ätzen von Metallen german Further Information about Processing AZ 10XT Photoresist (220cP) - 3.785 l 1A10XT220 AZ® 10XT (220CPS) Thick photoresist for high resolution   General Information AZ® 10XT is an i- and h-line (not g- line !) sensitive positive thick photoresist, as the successor to the AZ® and is largely identical in construction, but with a different surfactant. In contrast to the similarly named AZ® 12XT, the AZ® 10XT is not chemically amplified.   3.0 µm lines in 12 µm thick AZ® 10XT Ultratech Exposure, AZ® 400K Developer 1:4 (260s spray)   Product Features AZ® 10XT not only has optimized resist adhesion to common substrate materials, but also the potential for very steep resist sidewalls and high aspect ratios. Accordingly, the AZ® 10XT is often used in electroplating, ion implantation or dry etching/RIE. AZ® 10XT achieves a resist film thickness of approx. 6 µm at a spin speed of rpm; with an appropriately adjusted spin profile, the resist film thickness range of approx. 4.5 - 20 µm can be covered. If thinner resist layers are desired, the AZ® 10XT can be diluted with PGMEA; alternatively, the thinner AZ® can also be used for many applications. From a resist film thickness of approximately 10 - 15 µm, processing the AZ® 10XT becomes increasingly time-consuming: the soft bake and subsequent development take longer, more and more time is needed for rehydration between soft bake and exposure, and the risk of nitrogen bubbles forming during exposure increases. For resist film thicknesses greater than 10 µm, it is recommended to consider using a chemically amplified thick resist such as AZ® 12 XT (5 - 20 µm resist film thickness) or AZ®IPS (> 20 µm resist film thickness), which have significantly shorter soft bake and development times for the corresponding resist thickness, do not need rehydration, require significantly lower exposure doses, and do not release nitrogen during exposure. Developers For development, we recommend either TMAH-based developers such as the ready-to-use AZ® 326 MIF or AZ® 726 MIF, or the KOH-based AZ® 400K 1:4 (typically 1: 4 diluted with water, for faster development also slightly stronger with 1:3.5 or 1:3). On alkaline-sensitive substrate materials such as aluminum, we recommend the aluminum-compatible, undiluted AZ® Developer. Removers If the resist structures have not been thermally cross-linked by plasma processes, ion implantation or high temperatures (> approx. 140 °C), all common removers such as AZ® 100 Remover, DMSO or many other organic solvents (e.g. Acetone rinsed with Isopropanol) are suitable for removing the resist layer. For cross-linked resist structures, high-performance strippers such as the NMP-free TechniStrip P or AZ® 920 Remover are recommended, and in the case of alkaline-sensitive substrate materials (such as aluminum), the TechniStrip MLO 07. Thinning / Edge Wall Removal If the resist is to be diluted for spin coating, PGMEA = AZ® EBR Solvent is the recommended solvent. PGMEA is the solvent for AZ® 10 XT anyway and is also recommended for edge wall removal if necessary. Further Information Our safety data sheets and some of our technical data sheets are password-protected. You will receive the access data after completing the form. The access data for the data sheets are not your login data from our shop! MSDS: Safety Data Sheet AZ® 10XT (220cps) english Safety Data Sheet AZ® 10XT (220cps) german TDS: Technical Data Sheet AZ® 10XT (220cps) english Application Notes: Further Information about Photoresist Processing AZ 10XT Photoresist (520cP) - 3.785 l 1A010XT00 Bottle size: 3.785 l AZ® 10XT (520CPS) Thick photoresist for high resolution   General Information AZ® 10XT is an i- and h-line (not g- line !) sensitive positive thick photoresist, as the successor to the AZ® and is largely identical in construction, but with a different surfactant. In contrast to the similarly named AZ® 12XT, the AZ® 10XT is not chemically amplified.   3.0 µm lines in 12 µm thick AZ® 10XT Ultratech Exposure, AZ® 400K Developer 1:4 (260s spray)   Product Features AZ® 10XT not only has optimized resist adhesion to common substrate materials, but also the potential for very steep resist sidewalls and high aspect ratios. Accordingly, the AZ® 10XT is often used in electroplating, ion implantation or dry etching/RIE. AZ® 10XT achieves a resist film thickness of approx. 6 µm at a spin speed of rpm; with an appropriately adjusted spin profile, the resist film thickness range of approx. 4.5 - 20 µm can be covered. If thinner resist layers are desired, the AZ® 10XT can be diluted with PGMEA; alternatively, the thinner AZ® can also be used for many applications. From a resist film thickness of approximately 10 - 15 µm, processing the AZ® 10XT becomes increasingly time-consuming: the soft bake and subsequent development take longer, more and more time is needed for rehydration between soft bake and exposure, and the risk of nitrogen bubbles forming during exposure increases. For resist film thicknesses greater than 10 µm, it is recommended to consider using a chemically amplified thick resist such as AZ® 12 XT (5 - 20 µm resist film thickness) or AZ®IPS (> 20 µm resist film thickness), which have significantly shorter soft bake and development times for the corresponding resist thickness, do not need rehydration, require significantly lower exposure doses, and do not release nitrogen during exposure. Developers For development, we recommend either TMAH-based developers such as the ready-to-use AZ® 326 MIF or AZ® 726 MIF, or the KOH-based AZ® 400K 1:4 (typically 1: 4 diluted with water, for faster development also slightly stronger with 1:3.5 or 1:3). On alkaline-sensitive substrate materials such as aluminum, we recommend the aluminum-compatible, undiluted AZ® Developer. Removers If the resist structures have not been thermally cross-linked by plasma processes, ion implantation or high temperatures (> approx. 140 °C), all common removers such as AZ® 100 Remover, DMSO or many other organic solvents (e.g. Acetone rinsed with Isopropanol) are suitable for removing the resist layer. For cross-linked resist structures, high-performance strippers such as the NMP-free TechniStrip P or AZ® 920 Remover are recommended, and in the case of alkaline-sensitive substrate materials (such as aluminum), the TechniStrip MLO 07. Thinning / Edge Wall Removal If the resist is to be diluted for spin coating, PGMEA = AZ® EBR Solvent is the recommended solvent. PGMEA is the solvent for AZ® 10 XT anyway and is also recommended for edge wall removal if necessary.     Further Information Our safety data sheets and some of our technical data sheets are password-protected. You will receive the access data after completing the form. The access data for the data sheets are not your login data from our shop! MSDS: Safety Data Sheet AZ® 10XT (520cps) english Safety Data Sheet AZ® 10XT (520cps) german TDS: Technical Data Sheet AZ® 10XT (520cps) english Anwendungshinweis: Further Information about Photoresist Processing AZ 125nXT-10B Photoresist - 3.785 l nXT10B Bottle size: 3.785 l AZ® 125nXT-10B Ultra-Thick Negative Resist for Plating   General Information The AZ® 125nXT-10B is an i-line sensitive, negative ultra-thick resist with steep resist sidewalls and high aspect ratio. 20 µm lines at 60 µm resist film thickness. 15 µm holes at 60 µm resist film thickness. 80 µm plated CuNi image. Product Features The ultra-thick negative resist AZ® 125nXT-10B covers a resist film thickness range of 20 - 50 µm and can be built up and processed to 100 µm and much more with adapted spin profiles. AZ® 125nXT-10B is only i-line sensitive and, as a special feature (for negative resists), does not require a post exposure bake after exposure for cross-linking, i.e. the AZ® 125nXT-10B photopolymerizes. Due to its low absorption, even very thick resist layers can be easily exposed and steep resist sidewalls can be achieved. This and its very good adhesion to all common substrate materials make this resist suitable for the galvanic molding of thick to very thick layers as well as DRIE. With low exposure doses or very thick resist layers - related to the respective resist film thickness - the resist profile becomes slightly negative, since the resist areas close to the substrate experience less cross-linking. If the electroplating process shows that these weakly cross-linked areas of the resist are attacked, but a higher structuring exposure dose is not an option, flood exposure (without a photomask) after development with very high doses can cross-link the resist sidewalls even near the substrate, which, however, makes it more difficult to strip the resist later. Even after such flood exposure, no further post exposure back is necessary. AZ® 125nXT-10B can generally be processed with resist films of less than 20 µm thick, but processing becomes problematic below 10 µm thickness: Since the additive responsible for cross-linking escapes from the resist surface during softbaking, only a few micrometers of the exposed resist surface are removed during development, which accounts for a correspondingly large proportion of the total thickness in the case of thin resist films. Developers AZ® 326 MIF (immersion development), AZ® 726 MIF (puddle development) or AZ® MIF (which has an additive that promotes residue-free development, especially with cross-linking resists) are recommended for developing the AZ® 125nXT-10B. KOH- or NaOH-based developers such as AZ® 400K or AZ® 351B are generally not suitable for the AZ® 125nXT-10B. If TMAH-based developers cannot be used, a KOH-based developer in higher concentration than usual can be considered. Removers AZ® 125nXT-10B can be removed wet-chemically using conventional strippers, but stripping very thick cross-linked resist structures can be quite a challenge. If organic solvents are preferred for this, (hot) DMSO is recommended, which does not dissolve cross-linked resists, but can detach them from the substrate after a certain exposure time. This process can be accelerated by reducing the degree of cross-linking of the resist near the substrate by using a lower exposure dose. Alternatively, high-performance strippers such as the NMP-free TechniStrip P are recommended, or in the case of alkaline-sensitive substrate materials (such as aluminum), the TechniStrip MLO 07. Thinning/ Edge Wall Removal If the resist is to be diluted for spin coating, PGMEA = AZ® EBR Solvent is an option. PGMEA is the solvent for AZ® 125nXT-10B anyway and is also recommended for edge wall removal if necessary.     Further Information Our safety data sheets and some of our technical data sheets are password-protected. You will receive the access data after completing the form. The access data for the data sheets are not your login data from our shop! MSDS: Safety Data Sheet AZ® 125nXT-10B english Safety Data Sheet AZ® 125nXT-10B german TDS: Technical Data Sheet AZ® 125nXT-10B english Application Notes: Further Information about Photoresist Processing AZ 12XT-20PL-10 Photoresist - 3.785 l 1A012XT Bottle size: 3.785 l AZ® 12XT-20PL-10 Chemically Amplified Positive Tone Photoresists   General Information AZ® 12XT is a chemically amplified, i-line sensitive thick photoresist for high aspect ratios and with an increased thermal softening point.   AZ® 12XT - 2.4mm lines at 10mm film thickness   Product Features AZ® 12XT covers a resist film thickness range of approx. 5 - 20 µm. As a chemically amplified resist, the AZ® 12XT does not require rehydration between softbake and exposure, requires significantly lower exposure doses compared to non-chemically amplified resists of comparable thickness, does not release nitrogen during exposure (no bubble formation in the resist film during exposure), and has very high development rates for a thick resist. These properties help to make the entire process significantly faster and less prone to problems than with non-chemically amplified thick resists. Its good adhesion to all common substrate materials and its potential for steep resist sidewalls make it suitable for galvanic molding, and its high thermal softening point (approx. 130 °C) also recommends it for dry etching or DRIE. Basically, the AZ® 12XT is only sensitive to i-line, but with correspondingly high exposure doses and resist film thicknesses, the h-line (405 nm) can also be used. If resist film thicknesses of less than approx. 5 µm are required, the AZ® 12XT can easily be diluted with PGMEA = AZ® EBR Solvent. For resist film thicknesses greater than 15 µm, the chemically amplified AZ® IPS should be considered. Developers TMAH-based developers such as the ready-to-use AZ® 326 MIF or AZ® 726 MIF are recommended for developing this chemically amplified photoresist. KOH- or NaOH-based developers such as the AZ® 400 K or AZ® 351B are less suitable for the AZ® 12 XT. Removers If the resist structures have not been thermally cross-linked by plasma processes, ion implantation or high temperatures (> approx. 140 °C), all common removers such as AZ® 100 Remover, DMSO or many other organic solvents (e.g. acetone rinsed with isopropanol) are suitable for removing the resist layer. For cross-linked resist structures, high-performance strippers such as the NMP-free TechniStrip P or AZ® 920 Remover are recommended, and in the case of alkaline-sensitive substrate materials (such as aluminum), the TechniStrip MLO 07. Thinning/ Edge Bead Removal If the resist is to be diluted for spin coating, PGMEA = AZ® EBR Solvent is an option. PGMEA is the solvent for AZ® 12 XT anyway and is also recommended for edge wall removal if necessary.     Further Information Our safety data sheets and some of our technical data sheets are password-protected. You will receive the access data after completing the form. The access data for the data sheets are not your login data from our shop! MSDS: Safety Data Sheet AZ® 12XT 20PL-10 english Safety Data Sheet AZ® 12XT 20PL-10 german TDS: Technical Data Sheet AZ® 12XT 20PL-10 english Application Notes: Further Information about Photoresist Processing AZ 12XT-20PL-15 Photoresist - 3.785 l 1A012XT AZ® 12XT-20PL-15 Chemically Amplified Positive Tone Photoresists   General Information AZ® 12XT is a chemically amplified, i-line sensitive thick photoresist for high aspect ratios and with an increased thermal softening point.   AZ® 12XT - 2.4mm lines at 10mm film thickness   Product Features AZ® 12XT covers a resist film thickness range of approx. 5 - 20 µm. As a chemically amplified resist, the AZ® 12XT does not require rehydration between softbake and exposure, requires significantly lower exposure doses compared to non-chemically amplified resists of comparable thickness, does not release nitrogen during exposure (no bubble formation in the resist film during exposure), and has very high development rates for a thick resist. These properties help to make the entire process significantly faster and less prone to problems than with non-chemically amplified thick resists. Its good adhesion to all common substrate materials and its potential for steep resist sidewalls make it suitable for galvanic molding, and its high thermal softening point (approx. 130 °C) also recommends it for dry etching or DRIE. Basically, the AZ® 12XT is only sensitive to i-line, but with correspondingly high exposure doses and resist film thicknesses, the h-line (405 nm) can also be used. If resist film thicknesses of less than approx. 5 µm are required, the AZ® 12XT can easily be diluted with PGMEA = AZ® EBR Solvent. For resist film thicknesses greater than 15 µm, the chemically amplified AZ® IPS should be considered. Developers TMAH-based developers such as the ready-to-use AZ® 326 MIF or AZ® 726 MIF are recommended for developing this chemically amplified photoresist. KOH- or NaOH-based developers such as the AZ® 400 K or AZ® 351B are less suitable for the AZ® 12 XT. Removers If the resist structures have not been thermally cross-linked by plasma processes, ion implantation or high temperatures (> approx. 140 °C), all common removers such as AZ® 100 Remover, DMSO or many other organic solvents (e.g. acetone rinsed with isopropanol) are suitable for removing the resist layer. For cross-linked resist structures, high-performance strippers such as the NMP-free TechniStrip P or AZ® 920 Remover are recommended, and in the case of alkaline-sensitive substrate materials (such as aluminum), the TechniStrip MLO 07. Thinning/ Edge Wall Removal If the resist is to be diluted for spin coating, PGMEA = AZ® EBR Solvent is an option. PGMEA is the solvent for AZ® 12 XT anyway and is also recommended for edge wall removal if necessary.     Further Information Our safety data sheets and some of our technical data sheets are password-protected. You will receive the access data after completing the form. The access data for the data sheets are not your login data from our shop! MSDS: Safety Data Sheet AZ® 12XT 20PL-15 english Safety Data Sheet AZ® 12XT 20PL-15 german TDS: Technical Data Sheet AZ® 12XT 20PL-15 english Application Notes: Further Information about Photoresist Processing AZ Photoresist - 3.785 l 1A Bottle size: 3.785 l AZ® Positive Thin Resists for Wet Etching   General Information The AZ® Photoresist belongs to the AZ® Photoresist Series of positive thin resists (g-, h- and i-line sensitive) with optimized adhesion to all common substrate materials, the main application of which is as a resist mask for wet etching. Product Properties AZ® Resist Family is not optimized for very steep resist sidewalls nor for high stability against thermal softening (softening temperature approx. 100 °C), but for improved adhesion to all common substrate materials. The high photoinitiator concentration of the AZ® Photoresist Series compared to thick resists allows for very fast development. AZ® Photoresist is the thinnest member of the AZ® Photoresist Series with a resist film thickness of approx. 500 nm at rpm. This resist is often used for chrome etching in photomask production, but is also suitable as an etching mask for other materials. AZ® allows a resolution in the submicrometer range under optimized process parameters. If such a high resolution is not required, a slightly thicker resist (for example AZ® H Photoresist or AZ® Photoresist) can be useful, which reduces the risk of pinholes in the resist film caused by particles on the substrate and the corresponding etching defects. Further dilution of the AZ® is not recommended, as heavily diluted, photoinitiator-rich resists tend to quickly form particles. If the resist does have to be diluted, the corresponding batches should be used up quickly and attention should be paid to possible particle formation. Developers For development, we recommend either TMAH-based developers such as AZ® 326 MIF or AZ® 726 MIF, the NaOH-based AZ® 351B, and if the requirements for selectivity are not too high, the KOH-based AZ® 400K. With AZ® 351Bor AZ® 400K, it may be advisable to work with a higher diluted developer (for example 1:5 to 1:6) instead of the usual 1:4 dilution to achieve very fine resist structures or better controllable development times. On alkaline-sensitive substrate materials such as aluminum, we recommend the aluminum-compatible AZ® Developer in a 1:1 dilution. Removers If the resist structures have not been thermally cross-linked by plasma processes, ion implantation or high temperatures (> approx. 140°C), all common removers such as AZ® 100 Remover, DMSO or many other organic solvents (e.g. acetone rinsed with isopropyl alcohol) are suitable for removing the resist layer. For cross-linked resist structures, high-performance strippers such as the NMP-free TechniStrip P or AZ® 920 Remover are recommended, and in the case of alkaline-sensitive substrate materials (such as aluminum), the TechniStrip MLO 07. Thinning/ Edge Bead Removal Even if, as described above, further dilution of AZ® Photoresist is not recommended due to the accelerated particle formation, PGMEA = AZ® EBR Solvent is the recommended solvent. PGMEA is the solvent for AZ® anyway and is also recommended for edge wall removal if necessary.     Further Information Our safety data sheets and some of our technical data sheets are password-protected. You will receive the access data after completing the form. The access data for the data sheets are not your login data from our shop! MSDS: Safety Data Sheet AZ® Photoresist english Safety Data Sheet AZ® Photoresist german TDS: Technical Data Sheet AZ® Photoresist english Application Notes: Further Information about Photoresist Processing AZ HS Photoresist - 3.785 l 1A Bottle size: 3.785 l AZ® HS Positive Thin Resists for Wet Etching   General Information The AZ® HS Photoresist belongs to the AZ® Photoresist Series of positive thin resists (g-, h- and i-line sensitive) with optimized adhesion to all common substrate materials, the main application of which is as a resist mask for wet etching. Product Properties AZ® Resist Family is not optimized for very steep resist sidewalls nor for high stability against thermal softening (softening temperature approx. 100°C), but for improved adhesion to all common substrate materials. The high photoinitiator concentration of the AZ® Photoresist Series compared to thick resists allows for very fast development. AZ® HS Photoresist achieves a resist film thickness of approx. 1.3 µm at rpm and is often used for chrome etching in photomask production, but is also suitable as an etching mask for other materials. AZ® HS allows a resolution in the submicrometer range under optimized process parameters. If such a high resolution is not required, a slightly thicker resist (for example AZ® Photoresist) can be useful, which reduces the risk of pinholes in the resist layer caused by particles on the substrate and the corresponding etching defects. AZ® HS Photoresist has the highest photoinitiator concentration within the AZ® Photoresist Series, is correspondingly high in contrast, and shows a particularly high development rate. Diluting the AZ® HS is not advisable, as diluted resists that are very rich in photoinitiators tend to quickly form particles. If the resist still needs to be diluted, the corresponding amounts should be used up quickly and attention should be paid to possible particle formation. Developers For development, we recommend either TMAH-based developers such as AZ® 326 MIF or AZ® 726 MIF, the NaOH-based AZ® 351B (typically 1:4 diluted with water), and if the selectivity requirements are not too high, the KOH-based AZ® 400K (also typically 1:4 diluted with water). For very fine resist structures, a slightly higher dilution of the developer can be helpful. On alkaline-sensitive substrate materials such as aluminum, we recommend the aluminum-compatible AZ® Developer in a 2:1 to 1:1 dilution (developer : water). Removers If the resist structures have not been thermally cross-linked by plasma processes, ion implantation or high temperatures (> approx. 140°C), all common removers such as AZ® 100 Remover, DMSO or many other organic solvents (e.g. acetone rinsed with isopropyl alcohol) are suitable for removing the resist layer. For cross-linked resist structures, high-performance strippers such as the NMP-free TechniStrip P or AZ® 920 Remover are recommended, and in the case of alkaline-sensitive substrate materials (such as aluminum), the TechniStrip MLO 07. Thinning/ Edge Bead Removal Even if, as described above, further dilution of AZ® HS Photoresistis not recommended due to the accelerated particle formation, PGMEA = AZ® EBR Solvent is the recommended solvent. PGMEA is the solvent for AZ® HS anyway and is also recommended for edge wall removal if necessary.     Further Information Our safety data sheets and some of our technical data sheets are password-protected. You will receive the access data after completing the form. The access data for the data sheets are not your login data from our shop! MSDS: Safety Data Sheet AZ® HS Photoresist english Safety Data Sheet AZ® HS Photoresist german TDS: Technical Data Sheet AZ® HS Photoresist english Application Notes: Further Information about Photoresist Processing AZ H Photoresist - 3.785 l 1A Bottle size: 3.785 l AZ® H Positive Thin Resist for Wet Etching   General Information The AZ® H Photoresist belongs to the AZ® Photoresist Series of positive thin resists (g-, h- and i-line sensitive) with optimized adhesion to all common substrate materials, the main application of which is as a resist mask for wet etching. Product Properties AZ® Resist Family is not optimized for very steep resist sidewalls nor for high stability against thermal softening (softening temperature approx. 100°C), but for improved adhesion to all common substrate materials. The high photoinitiator concentration of the AZ® Photoresist Series compared to thick resists allows for very fast development. AZ® H Photoresist achieves a resist film thickness of approx. 1.5 µm at rpm and has particularly good adhesion to metallic substrate materials, making it suitable as an etching mask for aluminum, chrome and other metals, for example, but also for etching non-metallic layers. It is not advisable to dilute the AZ® H Photoresist too much, as diluted, photoinitiator-rich resists tend to quickly form particles. If the resist does need to be diluted, the corresponding amounts should be used up quickly and attention should be paid to possible particle formation. Developers For development, we recommend either TMAH-based developers such as the ready-to-use AZ® 326 MIF or AZ® 726 MIF, the NaOH-based AZ® 351B (typically 1:4 diluted with water), and if the selectivity requirements are not too high, the KOH-based AZ® 400K (also typically 1:4 diluted with water). For very fine resist structures, a slightly higher dilution of the developer can be helpful. On alkaline-sensitive substrate materials such as aluminum, we recommend the aluminum-compatible AZ® Developer in a 2:1 to 1:1 dilution (developer : water). Removers If the resist structures have not been thermally cross-linked by plasma processes, ion implantation or high temperatures (> approx. 140°C), all common removers such as AZ® 100 Remover, DMSO or many other organic solvents (e.g. acetone rinsed with isopropyl alcohol) are suitable for removing the resist layer. For cross-linked resist structures, high-performance strippers such as the NMP-free TechniStrip P or AZ® 920 Remover are recommended, and in the case of alkaline-sensitive substrate materials (such as aluminum), the TechniStrip MLO 07. Thinning/ Edge Bead Removal Even if, as described above, further dilution of AZ® H Photoresist is not recommended due to the accelerated particle formation, PGMEA = AZ® EBR Solvent is the recommended solvent. PGMEA is the solvent for AZ® H anyway and is also recommended for edge wall removal if necessary.     Further Information Our safety data sheets and some of our technical data sheets are password-protected. You will receive the access data after completing the form. The access data for the data sheets are not your login data from our shop! MSDS: Safety Data Sheet AZ® H Photoresist english Safety Data Sheet AZ® H Photoresist german TDS: Technical Data Sheet AZ® H Photoresist english Application Notes: Further Information about Photoresist Processing AZ Photoresist - 3.785 l 1A Bottle size: 3.785 l AZ® Positive Thin Resist for Wet Etching   General Information AZ® belongs to the AZ® photoresist series of positive thin resists (g-, h- and i-line sensitive) with optimized adhesion to all common substrate materials, the main application of which is as a resist mask for wet etching. Product Properties AZ® resist family is not optimized for very steep resist sidewalls nor for high stability against thermal softening (softening temperature approx. 100 °C), but for improved adhesion to all common substrate materials. The high photoinitiator concentration of the AZ® series compared to thick resists allows for very fast development. AZ® achieves a resist film thickness of approx. 1.8 µm at rpm and is often used for etching metallic or non-metallic layers. It is not advisable to dilute the AZ® below the level of the AZ® , as diluted, photoinitiator-rich resists tend to quickly form particles. If the resist does have to be diluted, the corresponding amounts should be used up quickly and attention should be paid to possible particle formation. AZ® should not be processed with a resist film thickness significantly thicker than approx. 2 µm, as the high photoinitiator concentration can lead to the formation of nitrogen bubbles in the resist film when exposed to light as the resist thickness increases. If thicker resist films are required, the AZ® , which has a significantly lower photoinitiator content, is recommended. Developers For development, we recommend either TMAH-based developers such as the ready-to-use AZ® 326 MIF or AZ® 726 MIF, the NaOH-based AZ® 351B (typically 1: 4 diluted with water), and if the selectivity requirements are not too high, the KOH-based AZ® 400K K (also typically 1:4 diluted with water). On alkaline-sensitive substrate materials such as aluminum, we recommend the aluminum-compatible AZ® Developer in a 2: 1 to 1:1 dilution (developer:water). Removers If the resist structures have not been thermally cross-linked by plasma processes, ion implantation or high temperatures (> approx. 140 °C), all common removers such as AZ® 100 Remover, DMSO or many other organic solvents (e.g. acetone rinsed with isopropanol) are suitable for removing the resist layer. For cross-linked resist structures, high-performance strippers such as the NMP-free TechniStrip P or AZ® 920 Remover are recommended, and in the case of alkaline-sensitive substrate materials (such as aluminum), the TechniStrip MLO 07. Thinning/ Edge Bead Removal Even if, as described above, a stronger dilution of AZ® is not recommended due to the accelerated particle formation, PGMEA = AZ® EBR Solvent.is the recommended solvent. PGMEA is the solvent for AZ® anyway and is also recommended for edge wall removal if necessary.     Further Information Our safety data sheets and some of our technical data sheets are password-protected. You will receive the access data after completing the form. The access data for the data sheets are not your login data from our shop! MSDS: Safety Data Sheet AZ® Photoresist english Safety Data Sheet AZ® Photoresist german TDS: Technical Data Sheet AZ® Photoresist english Application Notes: Further Information about Photoresist Processing) AZ 15nXT Photoresist (115cps) - 3.785 l 15nXT Bottle size: 3.785 l AZ® 15nXT (115CPS) Thick Negative Resist for Plating   General Information The i-line sensitive negative resist AZ® 15nXT (115CPS) is a thick resist with approx. 3 - 5 µm film thickness and very steep resist sidewalls for e. g. RIE or electroplating, for example. 5 µm lines at 10 µm resist film thickness. 5 µm holes at 10 µm resist film thickness. 5 µm plated CuNi image. 3.6 µm plated CuNi image. Product Features AZ® 15nXT (115CPS) covers a resist film thickness range of - depending on the spin speed - approx. 2 - 3 µm. It is only i-line sensitive and requires a post exposure bake after exposure to complete the cross-linking induced during exposure. The resist structures developed are very vertical with adjusted process parameters, becoming increasingly negative towards thick resist films or - based on the respective resist film thickness - lower exposure doses. If thinner resist films are required, the AZ® 15nXT (115CPS) can be diluted with PGMEA = AZ® EBR Solvent; for thicker layers, the higher viscosity AZ® 15nXT (450CPS) is recommended. AZ® 15nXT (115CPS) is suitable as a mask for the galvanic deposition of e.g. Cu, Ni or Au due to its good adhesion to all common substrate materials and its high chemical stability. Developers For the development of the AZ® 15nXT (115CPS), TMAH-based developers such as the ready-to-use AZ® 326 MIF (immersion development), AZ® 726 MIF (puddle development) or AZ® MIF are recommended, which promotes residue-free development, especially with cross-linking resists, thanks to an additive. KOH- or NaOH-based developers such as the AZ® 400 K or AZ® 351B are generally not suitable for the AZ® 15nXT (115CPS). If TMAH-based developers cannot be used, an attempt with a KOH-based developer in higher concentration than usual can be considered. Removers If the resist structures have not been thermally cross-linked too much, for example through metallization, stripping or lift-off with organic solvents (acetone rinsed with isopropanol or DMSO) can be successful. For more strongly cross-linked resist structures, high-performance strippers such as the NMP-free TechniStrip NI555 or AZ® 910 Remover are recommended, or in the case of alkaline-sensitive substrate materials (such as aluminum), the TechniStrip MLO 07. Thinning/ Edge Wall Removal If the resist is to be diluted for spin coating, PGMEA = AZ® EBR Solvent is an option. PGMEA is the solvent for AZ® 15nXT (115CPS) anyway and is also recommended for edge wall removal if necessary.     Further Information Our safety data sheets and some of our technical data sheets are password-protected. You will receive the access data after completing the form. The access data for the data sheets are not your login data from our shop! MSDS: Safety Data Sheet AZ® 15nXT (115CPS) Photoresist english Safety Data Sheet AZ® 15nXT (115CPS) Photoresist german TDS: Technical Data Sheet AZ® 15nXT (115CPS) Photoresist english Technical Data Sheet AZ® 15nXT Series english Application Notes: Further Information about Photoresist Processing AZ 15nXT Photoresist (450cps) - 3.785 l 15nXT3 Bottle size: 3.785 l AZ® 15nXT (450CPS) Thick Negative Resist for Plating   General Information The i-line sensitive negative resist AZ® 15nXT (450CPS) is a thick resist with a thickness of approx. 5 - 10 µm and vertical resist sidewalls for RIE or electroplating, for example. 5 µm lines at 10 µm resist film thickness. 5 µm holes at 10 µm resist film thickness. 5 µm plated CuNi image. 3.6 µm plated CuNi image. Product Features AZ® 15nXT (450CPS) covers a resist film thickness range of - depending on the spin speed - approx. 5 - 10 µm. It is only i-line sensitive and requires a post exposure bake after exposure to complete the cross-linking induced during exposure. With adjusted process parameters, the resist structures developed are vertical, increasingly negative towards thick resist films or - based on the respective resist film thickness - lower exposure doses. If thinner resist films are required, the AZ® 15nXT (450CPS) can be diluted with PGMEA = AZ® EBR Solvent. AZ® 15nXT (450CPS) is suitable as a mask for the galvanic deposition of e.g. Cu, Ni or Au due to its good adhesion to all common substrate materials and its high chemical stability. Developers For the development of the AZ® 15nXT (450CPS), TMAH-based developers such as the ready-to-use AZ® 326 MIF (immersion development), AZ® 726 MIF (puddle development) or AZ® MIF are recommended, which promotes residue-free development, especially with cross-linking resists, thanks to an additive. KOH- or NaOH-based developers such as the AZ® 400 K or AZ® 351B are generally not suitable for the AZ® 15nXT (450CPS). If TMAH-based developers cannot be used, an attempt with a KOH-based developer in higher concentration than usual can be considered. Removers If the resist structures have not been thermally cross-linked too much, for example through metallization, stripping or lift-off with organic solvents (acetone rinsed with isopropanol or DMSO) can be successful. For more strongly cross-linked resist structures, high-performance strippers such as the NMP-free TechniStrip NI555 or AZ® 910 Remover are recommended, or in the case of alkaline-sensitive substrate materials (such as aluminum), the TechniStrip MLO 07. Thinning/ Edge Wall Removal If the resist is to be diluted for spin coating, PGMEA = AZ® EBR Solvent is an option. PGMEA is the solvent for AZ® 15nXT (450CPS) anyway and is also recommended for edge wall removal if necessary.     Further Information Our safety data sheets and some of our technical data sheets are password-protected. You will receive the access data after completing the form. The access data for the data sheets are not your login data from our shop! MSDS: Safety Data Sheet AZ® 15nXT (450CPS) Photoresist english Safety Data Sheet AZ® 15nXT (450CPS) Photoresist german TDS: Technical Data Sheet AZ® 15nXT (450CPS) Photoresist english Technical Data Sheet AZ® 15nXT Series english Information AZ® 15nXT (450CPS) Photoresist english Application Notes: Further Information about Photoresist Processing AZ MIF Developer - 5.00 l AZ® MIF Developer Metal Ion-free Developers   General Information AZ® MIF is a TMAH-based developer for dip or puddle development, compatible with all AZ® photoresists from our portfolio. Product Properties The ready-to-use AZ® MIF developer is an aqueous 2.38% TMAH solution with a surfactant for uniform substrate wetting for puddle development, but is also suitable for immersion development. In addition, the AZ® MIF contains an additive to promote residue-free development with cross-linked resist structures. Since this additive slightly increases the dark erosion in positive resists, the AZ® MIF is less suitable for these resists, especially when high resolution requirements are required; in this case, the AZ® 326 MIF or AZ® 726 MIF would be the better choice. TMAH-based developers are always used when development has to be carried out metal ion free. In addition, TMAH-based developers are primarily recommended for our chemically amplified positive resists and our negative resists. For standard (non chemically amplified), DNQ-based positive resists without the requirement of metal ion-free development, a KOH or NaOH-based developer such as AZ® 400K or AZ® 351B can be considered instead of a TMAH-based developer for cost reasons. For very thin resist layers (< 1 µm) or very high resolution requirements, it can be useful to dilute AZ® MIF with water (AZ® MIF: water = 2:1 to a maximum of 1:1). AZ® MIF attacks aluminum with an etching rate of approx. 70 nm/min. If this cannot be tolerated, the Al-compatible "AZ® Developer " is an alternative, but this is based on sodium compounds and is therefore not metal ion-free. Further Information Our safety data sheets and some of our technical data sheets are password-protected. You will receive the access data after completing the form. The access data for the data sheets are not your login data from our shop! MSDS: Safety Data Sheet AZ® MIF Developer english Safety Data Sheet AZ® MIF Developer german TDS: Technical Data Sheet AZ® MIF Developer english Application Notes: Further Information about development of photoreist english Further Information about development of photoresist german

PURETCH™ Photoresist Film
This is the thinnest dry film photoresist available and thus the best for photo etching high resolution halftones and line work in copper and other metals. Etch silver with ferric nitrate. Exposes with a positive. Develop in soda ash, also available in our online store. The larger rolls are 24.75" wide. Pronounced purETCH, not purTECH !
• Puretch Film Specs here. Processing Instructions included with film.
• Puretch is also available in the US at Takach Press, in Europe at Polymetaal and in Japan at Studio Kitayama. ORDER ONLINE

If you want to learn more, please visit our website Boyang.

SKYLIGHT Photopolymer Intaglio Film
A thicker film for non-etch intaglio applications. Apply to acrylic plexi or metal sheet. Expose, develop and print. Excellent D-max and also works well for CTP Intaglio (computer to plate). Print directly onto film with any front-feed Epson. Film requires a halftoned image, either printed on transparency film or via CTP printing with Black-Ink-Only. Develops in soda ash, also available in our online store. ORDER ONLINE

DRAGON GRAVURE Photogravure - Rotogravure Paper
This paper has been discontinued as of July

PHOENIX GRAVURE Photogravure - Rotogravure Paper aka Gelatin Tissue
This tissue is quite similar to Dragon but is available in wider rolls. Detailed processing directions included with tissue. ORDER ONLINE

Ferric Chloride 48º Baumé 4 Gallons
This is a very high purity ferric chloride that is suitable to use as a replacement of the discontinued Fuji-Hunt Rotogravure Iron.  The quality has been tested by us for photogravure etching and it is excellent! Packaged in a case of 4 bottles, 1 gallon each.Price includes ground shipping and HazMat fees in the 48 states ORDER ONLINE

IZOTE Etching Inks (ee ZO tay)
Flavors: Graphite, Vine Black, Ultramarine Blue, Bone Black, French Black, Lamp Black, Mars BlackUmber Black, Transparent Base. Izote handcrafted inks are unrivaled in their tonal range, pigment load and fineness. They are specifically made for the delicately etched tones of photogravure and aquatint but work well for all etching and intaglio printing processes.
300 gram can (approx 200 ml) ORDER ONLINE

2x2, 2x4"" Squeegee Ink Cards
Polyurethane squeegee blade, sold by the inch. The squeegee blades make great inking cards for etching and are gentle on the metal while holding its edge for a very long time. The material is solvent resistant. The squeegee cards conveniently stand up on the inking slab. Card ink with the factory molded edges. ORDER ONLINE

Grayscale Dye-Based Inkset for High Resolution Continuous Tone Digital Positives / Negatives plus High Contrast / High Density output for Screen Printing, Puretch and Letterpress

Dye Inks are the absolute best for transparencies. Our new formula has a lightfast rating of 7 out of 8 so this new ink will work better when printing multiple contact prints from negatives! Cape Fear Press designed the original dye inkset in specifically for photogravure positives but the new inkset will work incredibly well for for continuous tone digital negatives for alternative photographic contact printing processes such as carbon, cyanotype, gum, albumen, silver gelatin, platinum-palladium, Woodburytype, etc. It is also designed for Black Ink Only printing for screen print halftones, letterpress negatives, Puretch halftones and more.

Profiles are Included and can be further calibrated to your process. The continuous tone profile is capable of printing in excess of 3.4 in UV density and the Black Ink Only profile can print even darker. Pigment inks rarely offer the Dmax required for several alternative processes.

Grayscale inks will naturally produce the smoothest and most artifact-free transparencies. Dye-based inks will ensure the highest resolution and blending for continuous tone transparencies. Dye will always print consistently in density and smoothly in the transitions because the tonal mixture is always in suspension and not settling in the cartridges like non-Epson pigment inks can. Dyes will also penetrate the transparency coating and are more scratch resistant than pigment.

This inkset and profiles are designed specifically for the Epson - and the Epson W EU Model. The inks can also be used in other Epson printers but a custom QTR ink profiles will be required which we can do for a fee. We can assume no responsibility for your using non Epson inks in your printer. No problems have been reported by users. Individual tone, 4 fl. oz.

Includes QTR profiles for continuous tone grayscale printing and a Black Ink Only profile for high density text, halftones and graphics. Detailed set up instructions included with K6 inkset. ORDER ONLINE

Agate Burnishers
Agate Burnishers make great burnishers for etching and copper gravure. The smooth stone does not mar the metal like a steel burnisher and brings the metal to print with a bright white. #3 Solid agate with pointed tip and blunt end ideal for burnishing highlights and or polishing bevels. The stone can be polished on the inside of a piece of leather (aka leather strop) with rubbing compound if it ever becomes scratched. #14 DISCONTINUED. ORDER ONLINE

Aquatint Screens by Cape Fear Press are available in 9x12". Larger screens coming soon! I have designed these digital screens to emulate the grain of my previous analogue screens. ORDER ONLINE

Dust Removing and Plate Drying Rollers 4", 10", 14", 20" and JUMBO 30"
The multi-purpose rollers work great for removing liquids from recently developed photogravure and photopolymer plates. Also works well for adhering gelatin to the plate. Removes dust from glass and aquatint screens. Also makes a great roller for carbon transfer printing and for gelatin tissue transfer to the copper plate.. ORDER ONLINE

Gampi Sukiawase
A 100 GSM heavyweight surface gampi printmaking paper with a sulphite backing. This paper works well for intaglio, photogravure, and the Japanese woodblock printmaking method, mokuhanga. It picks up every subtle tone from aquatints and gravure plates. Mist paper evenly with spray bottle and blot before printing etchings. Sold in a 38" wide roll in 2, 5 and 10 meters. ORDER ONLINE

Want more information on Photoresist Thinner? Feel free to contact us.

Additional reading:
Optical Brightener ? Tinopal - We Deliver Worldwide - Allschoolabs
When to Use Sodium Nitrate Granular？

Baume & Alcohol Hydrometers
39 - 51º Baume' Hydrometer. Temperature of Standardization 60°F. Sterilized glass.
Tralles-Proof Hydrometer for maintaining Alcohol solutions. Temperature of Standardization 60°F. Sterilized glass Subtract approx 5% when measuring alcohol at 70ºf. ORDER ONLINE

Fine Woven 100% Wool Sizing Catchers and Pusher Blankets Now available in 3 thicknesses, approx. 1 mm sizing catcher, 2mm sizing catcher and the NEW 2.6mm pusher blanket. Sold by the linear foot. ORDER ONLINE

Stouffer 21 step guide
Establish perfect Puretch exposure times easily with the Stouffer step guide. There are many different ways for exposing plates. There are an abundance of different exposure systems and processing techniques. The one constant is the step tablet. Use the step tablet as a benchmark for all exposures to achieve accuracy and repeatability. Click on guide image for instructions and density specifications. ORDER ONLINE

Sodium Carbonate, AKA Soda Ash 1/2 Lb.
Mix 10 Grams soda ash with 1 liter of water to make Puretch or Skylight Developer.
US Orders Only ORDER ONLINE

SYNTHETIC AQUATINT RESIN Back in stock!! formerly known as PICCO. ORDER ONLINE

UV Densitometry Services on our X-Rite 361T Densitometer
Mail us your printed wedge on film and we will you the readings. Calibrated digital 21 and 51 step wedges are located here. Check our online store link below for more info. ORDER ONLINE

Tech Support and Consulting
One free photogravure tech support request is included with each roll of gravure paper. To submit a troubleshooting request please use this link. These photogravure troubleshooting consults nomally will solve the issue but additional consulting is available for $25.00 per 15 minutes for in depth coaching or troubleshooting. Consultation for QuadtoneRIP or photo etching with Puretch is also available at the same rate. ORDER ONLINE

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US Money orders and checks accepted via mail if you prefer, personal checks will have to clear prior to shipping. Orders will ship US Priority mail with delivery confirmation after receiving payment. Please Cape Fear Press with your order so a confirmation with a total of shipping, handling and payment mailing address can be E-mailed back to you. Please title E-mails "Puretch Order".

PURCHASE ORDERS We accept purchase orders for US and Canadian Universities. Go to the Order Page (links above) for prices with shipping in your country. Please us with the Purchase Order. Please include a number in the . Orders must be paid for within 30 days of shipping or late fees will apply

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PLEASE READ

SALES TERMS & RETURN POLICY ON DAMAGED SHIPMENTS
• Orders may be returned un-opened for a store credit of the actual item amount listed above less shipping within 5 days of receiving. Recipient must also pay return shipping. This return/credit policy only applies to regularly in-stock retail items, not special orders listed above, tech support or contract work.
• All international customers are responsible for any CUSTOMS FEES that may occur. Contact your local customs agency for more info.
• Please inspect your product immediately upon receiving and contact us right away if your product was damaged in shipping. Damaged goods will need to be reported within 5 days to be processed for return and replacement.

• All US and International orders are shipped USPS Priority mail within 2 business days. This includes insurance and tracking. International Priority is normally 7-10 business days but we can not guarantee delivery times. If you need URGENT SHIPPING, please call 910-458- between 10am and 6pm Monday - Fridays, Eastern Standard Time, to arrange a USPS Express service or another carrier.

CAPE FEAR PRESS THANKS YOU FOR YOUR ORDERS! You help support the arts when you buy from an artist run business.

The Cape Fear Press, PurEtch, Phoenix Gravure and Dragon Gravure brand names and logos are all property of Cape Fear Press, ©- Cape Fear Press, all rights reserved.

The use of these logos or brand names is not permitted without express written permission from Cape Fear Press.

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